The residual C concentration control for low temperature growth p-type GaN-Reference-Cited by-同舟云学术

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The residual C concentration control for low temperature growth p-type GaN

Published:2017-09 Issue:10 Volume:26 Page:107102
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Liu Shuang-Tao,Zhao De-Gang,Yang Jing,Jiang De-Sheng,Liang Feng,Chen Ping,Zhu Jian-Jun,Liu Zong-Shun,Li Xiang,Liu Wei,Xing Yao,Zhang Li-Qun

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/26/10/107102/pdf

Reference24 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling;Chinese Physics Letters;2018-09

2. Theoretical analysis of induction heating in high-temperature epitaxial growth system;AIP Advances;2018-08

3. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer;Superlattices and Microstructures;2018-01

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