Theoretical analysis of induction heating in high-temperature epitaxial growth system-Reference-Cited by-同舟云学术

Theoretical analysis of induction heating in high-temperature epitaxial growth system

Published:2018-08 Issue:8 Volume:8 Page:085114
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Mei Shuzhe¹²^ORCID,Wang Quan¹³,Hao Meilan¹²⁴,Xu Jiankai¹²,Yin Haibo¹²,Xiao Hongling¹²,Feng Chun¹²,Jiang Lijuan¹²,Wang Xiaoliang¹²^ORCID,Liu Fengqi¹²,Xu Xiangang³,Wang Zhanguo¹²

Affiliation:

1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China

2. University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

3. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China

4. School of Information & Electrical Engineering, Hebei University of Engineering, Handan 056038, People’s Republic of China

Funder

The National Key R&D Program of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5030949

Reference23 articles.

1. Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures

2. Effects of thermal annealing onn-type GaAs:V grown by MOCVD

3. Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

4. Two-Step Growth of Epitaxial InP Layers by Metal Organic Chemical Vapor Deposition

5. Optical properties of InP/InAlAs/InP grown by MOCVD on (100) substrates: influence of V/III molar ratio

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