Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=7/a=076803/pdf
Reference18 articles.
1. The Blue Laser Diode
2. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
3. GaN-Based Resonant-Cavity Light-Emitting Diodes With Top and Bottom Dielectric Distributed Bragg Reflectors
4. Optical Gain Analysis of Graded InGaN/GaN Quantum-Well Lasers
5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
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1. Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes;CrystEngComm;2021
2. High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier;Chinese Physics B;2017-01
3. Effect of In Diffusion on the Property of Blue Light-Emitting Diodes;Chinese Physics Letters;2015-06
4. Thermal Analysis of Implant-Defined Vertical Cavity Surface Emitting Laser Array;Chinese Physics Letters;2015-01
5. Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells;Chinese Physics B;2014-05
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