Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/4/048503/pdf
Reference19 articles.
1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2. Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors
3. Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs
4. Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation*;Chinese Physics B;2021-11-01
2. Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-08-31
3. Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures;Journal of Physics D: Applied Physics;2018-08-02
4. Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition;Chinese Physics B;2016-01
5. Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices;Acta Physica Sinica;2016
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