A snapback suppressed reverse-conducting IGBT with uniform temperature distribution
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/1/018505/pdf
Reference23 articles.
1. Ultra-low on-resistance high voltage (> 600 V) SOI MOSFET with a reduced cell pitch
2. Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n + -layer
3. A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer
4. Design of IGBT with integral freewheeling diode
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1. An RC-LIGBT With Dual Self-Driving nMOS For Enhancing Short Circuit Property and Modulating Electron Injection;IEEE Transactions on Electron Devices;2023-12
2. 1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application;ECS Journal of Solid State Science and Technology;2022-11-01
3. A snapback-free RC-LIGBT with separated LIGBT and FWD;IEICE Electronics Express;2022-09-10
4. A Snapback-Free RC-LIGBT With Separated LIGBT and FWD;IEICE ELECTRON EXPR;2022
5. Simulation Study of Low Turn-Off Loss and Snapback-Free SA-IGBT with Injection-Enhanced p-Floating Layer;Electronics;2022-07-28
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