A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled p-Type Dummy Region;Chinese Journal of Electronics;2024-03
2. High performance carrier stored trench bipolar transistor with dual shielding structure;Chinese Physics B;2023-02-01
3. Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient;Solid-State Electronics;2017-03
4. Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects;IET Power Electronics;2016-04
5. A novel high performance TFS SJ IGBT with a buried oxide layer;Chinese Physics B;2014-07-31
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