A novel high performance TFS SJ IGBT with a buried oxide layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/8/088504/pdf
Reference21 articles.
1. 1200-V Low-Loss IGBT Module With Low Noise Characteristics and High ${d}I_{C}/{d}t$ Controllability
2. On Dynamic Effects Influencing IGBT Losses in Soft-Switching Converters
3. 4.5-kV Injection-Enhanced Gate Transistors (IEGTs) With High Turn-Off Ruggedness
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