Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/1/016101/pdf
Reference24 articles.
1. High-power and reliable operation of vertical light-emitting diodes on bulk GaN
2. GaN/AlGaN quantum wells for UV emission: heteroepitaxy versus homoepitaxy
3. Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes
4. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes
5. Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates
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2. Comparison of Beyond 1 GHz C-Plane Freestanding and Sapphire-Substrate GaN-Based micro-LEDs for High-Speed Visible Light Communication;Journal of Lightwave Technology;2023-03-01
3. Operating behavior of micro-LEDs on a GaN substrate at ultrahigh injection current densities;Optics Express;2019-07-16
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5. Growth of a -Plane GaN Films on r -Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy;Chinese Physics Letters;2015-08
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