A threshold voltage analytical model for high-kgate dielectric MOSFETs with fully overlapped lightly doped drain structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature
3. Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor
4. Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition
5. (Invited) High-k Gate Dielectrics for Nanoscale CMOS Devices: Status, Challenges, and Future
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1. Interface Trap Charge Induced Threshold Voltage Modeling of WFE High-K SOI MOSFET;Silicon;2020-01-27
2. Theoretical analysis and optimization of high-k dielectric layers for designing high-performance and low-power-dissipation nanoscale double-gate MOSFETs;Journal of Computational Electronics;2019-05-31
3. A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric;Chinese Physics B;2015-09-29
4. A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET;Chinese Physics B;2014-11
5. Study of the SOI MOSFET characteristics of high-k gate dielectric with quantum effect;Acta Physica Sinica;2012
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