Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. Fabrication and characteristics of high- K HfO 2 gate dielectrics on n-germanium
2. Characterization of mixed-signal properties of MOSFETs with high-k (SiON/HfSiON/TaN) gate stacks
3. HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
4. Characterization of 1.9- and 1.4-nm Ultrathin Gate Oxynitride by Oxidation of Nitrogen-implanted Silicon Substrate
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2. Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors;Thin Solid Films;2019-07
3. Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO2films;IOP Conference Series: Materials Science and Engineering;2018-02
4. Effects of rapid thermal annealing on interfacial and electrical properties of Gd-doped HfO2 high-k gate dielectrics;Journal of Alloys and Compounds;2015-10
5. The fundamental downscaling limit of field effect transistors;Applied Physics Letters;2015-05-11
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