Fabrication and characteristics of high- K HfO 2 gate dielectrics on n-germanium
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/1/042/pdf
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1. Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors
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1. High performance strained Si0.5Ge0.5 quantum-well p-MOSFETs fabricated using a high-κ/metal-gate last process;Superlattices and Microstructures;2015-07
2. A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process;Chinese Physics B;2013-11
3. Comparative studies of Ge and Si p-channel metal–oxide–semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate;Chinese Physics B;2010-05
4. Quantization of electromagnetic field in quadratic continuous nonlinear absorptive dielectrics;Chinese Physics B;2010-02
5. Thermal stability of HfTaON films prepared by physical vapor deposition;Journal of Semiconductors;2009-02
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