Comparative studies of Ge and Si p-channel metal–oxide–semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Charge trapping effect at the interface of ferroelectric/interlayer in the ferroelectric field effect transistor gate stack;Chinese Physics B;2023-07-01
2. Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process;Chinese Physics Letters;2013-08
3. Flat-band voltage shift in metal-gate/high- k /Si stacks;Chinese Physics B;2011-09
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