Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=5/a=058104/pdf
Reference31 articles.
1. Optical recombination from excited states in Ge/Si self-assembled quantum dots
2. Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Formation of planar defects over GeSi islands in Si capping layer grown at low temperature
5. Transition States Between Pyramids and Domes During Ge/Si Island Growth
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effects of interruption time on the growth of Ge islands prepared by ion beam sputtering deposition;Vacuum;2018-08
2. Morphological evolution of self-assembled SiGe islands based on a mixed-phase pre-SiGe island layer grown by ion beam sputtering deposition;Applied Surface Science;2015-02
3. Application of quantum dot infrared photodetectors in space photoelectric systems;Acta Physica Sinica;2014
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