Optical recombination from excited states in Ge/Si self-assembled quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.155310/fulltext
Reference31 articles.
1. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
2. Luminescence origins in molecular beam epitaxial Si1−xGex
3. High quantum efficiency photoluminescence from localized excitons in Si1−xGex
4. High-energy behavior of the double photoionization of helium from 2 to 12 keV
5. Near-threshold continuum structure and the dissociation energies ofH2, HD, andD2
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