The effects of interruption time on the growth of Ge islands prepared by ion beam sputtering deposition-Reference-Cited by-同舟云学术

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The effects of interruption time on the growth of Ge islands prepared by ion beam sputtering deposition

Published:2018-08 Issue: Volume:154 Page:115-119
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Yang Jie,Weng Xiaokang,Zhang Mingling,Yang Tao,Qiu Feng,Wang Rongfei,Wang Chong,Yang Yu

Funder

National Science Foundation of China

Key Project of Applied Basic Research Project of Yunnan Province of China

Reserve Talents project of Academic Lead of Yunnan Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference36 articles.

1. High-performance Ge-on-Si photodetectors

2. Designer Ge/Si composite quantum dots with enhanced thermoelectric properties

3. Atomic-Scale Pathway of the Pyramid-to-Dome Transition during Ge Growth on Si(001)

4. Composition and stress of SiGe nanostructures on curved substrates

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1. Te doping effects on the ferromagnetic performance of the MnGe/Si quantum dots grown by ion beam sputtering deposition;Journal of Alloys and Compounds;2023-12

2. Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique;Scientific Reports;2023-05-09

3. Flexible inorganic piezoelectric functional films and their applications;Journal of Advanced Ceramics;2023-03

4. Spectrum modulation of a thin-film filter with visible and near infrared dual band-pass channel;J INFRARED MILLIM W;2020

5. Development of residual stress and uniaxial magnetic anisotropy during growth of polycrystalline Co film;Materials Research Bulletin;2020-01

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