Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/8/088504/pdf
Reference22 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
3. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
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1. Electrical instabilities of a-IGZO TFTs under different conditions of bias and illumination stress;Microelectronics Reliability;2023-09
2. Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs;Chinese Physics B;2022-09-01
3. Persistent photoconductivity in a-IGZO thin films induced by trapped electrons and metastable donors;Journal of Applied Physics;2022-03-28
4. Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress*;Chinese Physics B;2021-12-01
5. Accurate analytical model for effective carrier mobility of fully hydrogenated poly-si TFTs under White light illumination;Optik;2019-10
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