Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/2/028502/pdf
Reference27 articles.
1. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
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2. Working Mechanisms of Nanoscale Light-Emitting Diodes Operating in Non-Electrical Contact and Non-Carrier Injection Mode: Modeling and Simulation;Nanomaterials;2022-03-10
3. Reduction in efficiency droop/decline of green GaN-based light-emitting diodes by employing heterostructure cap layer;Materials Science and Engineering: B;2020-08
4. Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states;Japanese Journal of Applied Physics;2018-07-03
5. Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits;Chinese Physics Letters;2018-02
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