Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits-Reference-Cited by-同舟云学术

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Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

Published:2018-02 Issue:2 Volume:35 Page:027301
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Li Ai-Xing,Mo Chun-Lan,Zhang Jian-Li,Wang Xiao-Lan,Wu Xiao-Ming,Wang Guang-Xu,Liu Jun-Lin,Jiang Feng-Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/35/2/027301/pdf

Reference15 articles.

1. Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop

2. Mechanism of hole injection enhancement in light-emitting diodes by inserting multiple hole-reservoir layers in electron blocking layer

3. InGaN/GaN light-emitting diode with a polarization tunnel junction

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