The influence of thermally assisted tunneling on the performance of charge trapping memory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/21/7/078501/pdf
Reference13 articles.
1. Modeling and simulation of tunneling through ultra-thin gate dielectrics
2. Modeling the memory retention characteristics of silicon‐nitride‐oxide‐silicon nonvolatile transistors in a varying thermal environment
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3. Gate-to-body tunneling current model for silicon-on-insulator MOSFETs;Chinese Physics B;2013-10
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