Gate-to-body tunneling current model for silicon-on-insulator MOSFETs-Reference-Cited by-同舟云学术

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Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

Published:2013-10 Issue:10 Volume:22 Page:108501
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Wu Qing-Qing,Chen Jing,Luo Jie-Xin,Lü Kai,Yu Tao,Chai Zhan,Wang Xi

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/22/10/108501/pdf

Reference11 articles.

1. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

2. A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits

3. Gate tunneling leakage current behavior of 40nm PD SOI NMOS device considering the floating body effect

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical Investigation of Tunneling Current in Nano-MOSFET Using BSIM4 Model for Low Power VLSI Applications;Social Transformation – Digital Way;2018

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