Analytical Investigation of Tunneling Current in Nano-MOSFET Using BSIM4 Model for Low Power VLSI Applications
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-13-1343-1_2
Reference12 articles.
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4. Lee, W.C., Hu, C.: Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling. IEEE Trans. Electron Devices 48(7), 1366–1373 (2001)
5. Cassan, E., Dollfus, P., Galdin, S., Hesto, P.: Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs. Microelectron. Reliab. 40(4–5), 585–588 (2000)
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