Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/3/037304/pdf
Reference22 articles.
1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2. SiC and GaN Wide Bandgap Device Technology Overview
3. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
4. Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
5. 210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of Offset Corbino Thin Film Transistor: A Physical Model;Electronics;2023-05-11
2. Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation;Electronics;2021-10-28
3. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors;Semiconductor Science and Technology;2020-11-13
4. Temperature based analysis of 3-step field plate AlGaN/GaN HEMT using numerical simulation;Advances in Natural Sciences: Nanoscience and Nanotechnology;2019-10-15
5. Effects of Parasitic Source/Drain Field Plates on Performances of Channel-Passivated Amorphous InGaZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2018-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3