Affiliation:
1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Abstract
Offset Corbino thin film transistor is a good candidate for high voltage thin film transistor (HVTFT) due to the uniform drain electric field distribution benefiting from the circular structure. The physical model of offset Corbino thin film transistor characteristics has yet to be clarified. In this study, Equations are derived to describe the current–voltage relations of Corbino TFT with offset at the drain or source sides. The influence of offset position and parameters on the saturation voltage and the saturation current was described quantitatively. Three-dimensional Computer-Aided Design simulation and experiment results verify the theoretical physical model. Our physical model provides design rules for high voltage offset Corbino TFT when considering the voltage tolerance and saturation current balance.
Funder
the National Key Research and Development Program of China
the National Natural Science Foundation of China
the Science and Technology Department of Guangdong Province
the Natural Science Foundation of Guangdong Province
Fundamental Research Funds for the Central Universities, and the Guangzhou Science Technology and Innovation Commission
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Cited by
3 articles.
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