Positive gate-bias temperature instability of ZnO thin-film transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/6/068501/pdf
Reference30 articles.
1. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
2. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
3. The research on suspended ZnO nanowire field-effect transistor
4. Top-Gate Staggered a-IGZO TFTs Adopting the Bilayer Gate Insulator for Driving AMOLED
5. Characteristics of Thin-Film Transistors Fabricated on Fluorinated Zinc Oxide
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