Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high- κ insulator-Reference-Cited by-同舟云学术

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high- κ insulator

Published:2018-04 Issue:4 Volume:27 Page:048502
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Chen Xue,Wang Zhi-Gang,Wang Xi,B Kuo James

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/27/4/048502/pdf

Reference21 articles.

1. A Vertical Power MOSFET With an Interdigitated Drift Region Using High- $k$ Insulator

2. Vertical Power ${\rm H}k$-MOSFET of Hexagonal Layout

3. Study on H K -VDMOS with Deep Trench Termination

4. Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode

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