Vertical Power ${\rm H}k$-MOSFET of Hexagonal Layout-Reference-Cited by-同舟云学术

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Vertical Power ${\rm H}k$-MOSFET of Hexagonal Layout

Published:2013-05 Issue:5 Volume:60 Page:1709-1715
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lyu Xinjiang,Chen Xingbi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6504760/06494276.pdf?arnumber=6494276

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3. A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance;Journal of Semiconductors;2023-05-01

4. Perhaps First Experimental Report of New 2D TCRFP Device;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

5. A Taxonomical Review of MOS Power Transistor for Electronic Circuits and Devices;Lecture Notes in Electrical Engineering;2022-10-22

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