Effect of de-trapping on carrier transport process in semi-insulating CdZnTe
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/6/067203/pdf
Reference27 articles.
1. Cadmium zinc telluride and its use as a nuclear radiation detector material
2. Point Defects in CdZnTe Crystals Grown by Different Techniques
3. Fast High-Flux Response of CdZnTe X-Ray Detectors by Optical Manipulation of Deep Level Defect Occupations
4. Carrier transport properties of HPB CdZnTe and THM CdTe:Cl
5. TCT characterization of different semiconductor materials for particle detection
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1. Effect of Oxygen-Related Defects on Electrical Properties of Cd0.9Zn0.1Te Semiconductor;IEEE Transactions on Nuclear Science;2024-08
2. Improvement of radiation detection performance of detector prepared by CdZnTe epitaxial single crystal;Radiation Measurements;2024-07
3. Effect of transient space–charge perturbation on carrier transport in high-resistance CdZnTe semiconductor*;Chinese Physics B;2019-10-01
4. Twin boundary dominated electric field distribution in CdZnTe detectors;Chinese Physics B;2018-11
5. Study on the effects of indentation-induced dislocations on the detector performance of CdZnTe crystals;Journal of Applied Physics;2017-12-14
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