Improvement of radiation detection performance of detector prepared by CdZnTe epitaxial single crystal

Author:

Wan Xin,Kang Yang,Wei Heming,Jiang Ran,Liu Yu,Cheng Renying,Tian Xue,Tan Tingting,Zha Gangqiang,Li Yingrui,Cao Kun

Funder

Key Research and Development Projects of Shaanxi Province

Science, Technology and Innovation Commission of Shenzhen Municipality

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

National Key Research and Development Program of China

Publisher

Elsevier BV

Reference30 articles.

1. Room-temperature X-ray response of cadmium–zinc–telluride pixel detectors grown by the vertical Bridgman technique;Abbene;J. Synchrotron Radiat.,2020

2. Characterization of traveling heater method (THM) grown Cd0.9Zn0.1Te crystals;Chen;IEEE. T. Nucl. Sci.,2007

3. Distinctive distribution of defects in CdZnTe: in ingots and their effects on the photoelectric properties. Chinese;Fu;Phys. B.,2018

4. Effect of de-trapping on carrier transport process in semi-insulating CdZnTe. Chinese;Guo;Phys. B.,2015

5. Effect of transient space–charge perturbation on carrier transport in high resistance CdZnTe semiconductor;Guo;Chinese Phys B,2019

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