Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/11/118504/pdf
Reference22 articles.
1. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications
3. High brightness and efficiency blue light-emitting polymer diodes
4. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
5. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance enhancement of AlGaN/InGaN MQW LED with GaN/InGaN superlattice structure;IET Optoelectronics;2017-07-03
2. Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages;Chinese Physics B;2017-06-01
3. Optimization on the luminous efficiency in AlGaN-based ultraviolet light-emitting diodes by amendment of a superlattice hole reservoir layer;Superlattices and Microstructures;2017-01
4. Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices;Photonics;2016-01-13
5. Efficiency enhancement of an InGaN light-emitting diode with a u-InGaN/AlInGaN superlattice last quantum barrier;Applied Physics A;2015-02-19
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