Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/9/097305/pdf
Reference27 articles.
1. Reaction between SiC and W, Mo, and Ta at elevated temperatures
2. Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height
3. Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode
4. Nickel based ohmic contacts on SiC
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1. Fabrication and Characterization of a Silicon Carbide Based Schottky Barrier Diode;Journal of Electronic Materials;2023-08-19
2. Performance Evaluation of W-C Alloy Schottky Contact for 4H-SiC Diodes;IEEE Transactions on Electron Devices;2022-10
3. Improved interface characteristics of Mo/4H-SiC schottky contact;Solid-State Electronics;2021-11
4. Research status and progress of metal contacts of SiC power devices;Acta Physica Sinica;2021
5. Gaussian distribution of inhomogeneous nickel–vanadium Schottky interface on silicon (100);Semiconductor Science and Technology;2020-12-01
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