Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs-Reference-Cited by-同舟云学术

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Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

Published:2018-09 Issue:9 Volume:27 Page:097309
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Zhang Sheng,Wei Ke,Xiao Yang,Ma Xiao-Hua,Zhang Yi-Chuan,Liu Guo-Guo,Lei Tian-Min,Zheng Ying-Kui,Huang Sen,Wang Ning,Asif Muhammad,Liu Xin-Yu

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/27/9/097309/pdf

Reference28 articles.

1. N-polar GaN epitaxy and high electron mobility transistors

2. GaN-Based RF Power Devices and Amplifiers

3. Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

4. 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

5. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes;Materials Science and Engineering: B;2024-09

2. Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer;Electronics;2024-04-26

3. A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed;International Journal of High Speed Electronics and Systems;2024-02-23

4. Rolling velocity and relative motion of particle detector in local granular flow;Chinese Physics B;2022-11-01

5. Structural and thermodynamic properties of inhomogeneous fluids in rectangular corrugated nano-pores;Chinese Physics B;2021-12-11

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