Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates-Reference-Cited by-同舟云学术

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Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

Published:2010-08 Issue:8 Volume:19 Page:088101
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Guo-Sheng Sun,Xing-Fang Liu,Lei Wang,Wan-Shun Zhao,Ting Yang,Hai-Lei Wu,Guo-Guo Yan,Yong-Mei Zhao,Jin Ning,Yi-Ping Zeng,Jin-Min Li

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference18 articles.

1. Study of runaway electron behaviour during electron cyclotron resonance heating in the HL-2A Tokamak

2. Silicon Carbide Differential Amplifiers for High-Temperature Sensing

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling;Journal of Crystal Growth;2020-02

2. Breakdown Voltage of a Floating Metal Ring Using Mo Metal;Journal of Nanoscience and Nanotechnology;2019-03-01

3. The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0 0 0 1) Si-face substrates;Journal of Crystal Growth;2019-02

4. Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates;Applied Surface Science;2015-10

5. Optimization of growth parameters for growth of high quality heteroepitaxial 3C–SiC films at 1200°C;Thin Solid Films;2015-02

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