Affiliation:
1. Case Western Reserve University
2. NASA Glenn Research Center (GRS)
Abstract
This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased
sensors operating in harsh environments. More specifically, differential amplifiers were
constructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs and off-chip passive
components. A three-stage voltage amplifier has a differential voltage gain of ~50 dB and a gainbandwidth
of ~200 kHz at 450oC, as limited by test parasitics. Such an amplifier could be used to
amplify the signals produced by a piezoresistive Wheatstone bridge sensor, for example. Design
considerations for 6H-SiC JFET transimpedance amplifiers appropriate for capacitance sensing and
for frequency readout from a micromechanical resonator are also presented.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
8 articles.
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