Electronic, optical, and mechanical properties of BN, AlN, and InN with zinc-blende structure under pressure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/8/086103/pdf
Reference56 articles.
1. Band structure and high-pressure phase transition in GaN, AlN, InN and BN
2. Nitride-based semiconductors for blue and green light-emitting devices
3. Group III nitride semiconductors for short wavelength light-emitting devices
4. III–nitrides: Growth, characterization, and properties
5. Band parameters for III–V compound semiconductors and their alloys
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