Flat-band voltage shift in metal-gate/high- k /Si stacks
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference56 articles.
1. Annealing characteristics of ultra-thin high- K HfO 2 gate dielectrics
2. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
3. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility
4. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
5. Variation in the fixed charge density of SiO[sub x]/ZrO[sub 2] gate dielectric stacks during postdeposition oxidation
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2. Parameter extraction of gate tunneling current in metal–insulator–semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3;Journal of Materials Science: Materials in Electronics;2018-04-18
3. Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric;IEEE Electron Device Letters;2017-11
4. Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling;Scientific Reports;2017-03-02
5. Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl 4 and TMA precursors;Chinese Physics B;2016-03
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