Investigation of the inhomogeneous barrier height of an Au/Bi 4 Ti 3 O 12 /n-Si structure through Gaussian distribution of barrier height
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference28 articles.
1. The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures
2. Fabrication and properties of silicon-based (Bi,Sm)4Ti3O12 thin film
3. SrBi2Ta2O9 memory capacitor on Si with a silicon nitride buffer
4. Characteristics of metal–ferroelectric–insulator–semiconductor structure using La-modified Bi4Ti3O12 as the ferroelectric layer
5. Ferroelectric field‐effect memory device using Bi4Ti3O12film
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