Fabrication and properties of silicon-based (Bi,Sm)4Ti3O12 thin film
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference20 articles.
1. Ferroelectricity inBi4Ti3O12and Its Solid Solutions
2. Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition
3. Large remanent polarization of vanadium-doped Bi4Ti3O12
4. Ferroelectric (Bi,Dy)4Ti3O12 thin films deposited on Pt(111)/Ti/SiO2/Si and p-type Si(100) substrates
5. Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure
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2. Understanding of structural evolution, dielectric performance, and photoluminescence behavior of Sm-modified Na0.5Bi0.5TiO3;Materials Today Communications;2023-08
3. Structural, dielectric and electrical characteristics of Bi3.9Sm0.1Ti3O12 ferroelectrics;Materials Chemistry and Physics;2022-03
4. Microstructure and ferroelectric properties of bi-excess Bi4Ti3O12 thin films grown on Si and Pt/Ti/SiO2/Si substrates;Ferroelectrics;2020-01-02
5. Structure and electrical properties of Zn‐doped BiFeO 3 films;International Journal of Applied Ceramic Technology;2019-12-05
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