The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference33 articles.
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1. Investigation of the dielectric properties of Au/Bi4Ti3O12-SiO2/n-Si (MFIS) type structures depending on gamma-irradiation;Microelectronics Reliability;2023-01
2. Ionizing radiation response of bismuth titanate-based metal-ferroelectric-semiconductor (MFS) type capacitor;Microelectronics Reliability;2022-06
3. The effect of radiation on the forward and reverse bias current–voltage (I–V) characteristics of Au/(Bi4Ti3O12/SiO2)/n-Si (MFIS) structures;Journal of Materials Science: Materials in Electronics;2020-06-22
4. Schottky Yapılar Üzerine İnceleme ve Analiz Çalışması;Journal of Polytechnic;2018-05-24
5. Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures;Journal of Electronic Materials;2018-03-12
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