Characteristics of metal–ferroelectric–insulator–semiconductor structure using a Nd-doped Bi4Ti3O12 ferroelectric layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Kinetic Pathways to Strain Relaxation in the Si-Ge System
2. Switching, fatigue, and retention in ferroelectric Bi4Ti3O12thin films
3. Ferroelectric Properties of Bismuth Layer-Structured Compound SrxBi4-xTi3-xTaxO12(0≦x≦2)
4. Lanthanum-substituted bismuth titanate for use in non-volatile memories
5. Electromechanical properties of Nd-doped Bi4Ti3O12 films: A candidate for lead-free thin-film piezoelectrics
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1. Perovskite-based emerging memories;Perovskite Ceramics;2023
2. Ferroelectric, dielectric, and optical properties of Nd-substituted Bi4Ti3O12 nanoparticles synthesized by sol-gel method;Progress in Natural Science: Materials International;2016-12
3. Low-temperature growth and characterization of neodymium-substituted bismuth titanate nanowires in a highly ordered anodic aluminum oxide template by an AC electrodeposition method on the platinum substrate for ferroelectric applications;Ceramics International;2016-06
4. Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi3.4Ce0.6Ti3O12/CeO2/Si structure;Journal of Physics D: Applied Physics;2011-12-20
5. Preparation and photocatalytic properties of sillenite Bi12TiO20 films;Surface and Coatings Technology;2008-07
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