Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/10/108102/pdf
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1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
2. A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size
3. Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.
4. Single-Electron Transport through Single Dopants in a Dopant-Rich Environment
5. Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire
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1. Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots;Nanoscale;2022
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3. Dopant atoms as quantum components in silicon nanoscale devices;Journal of Semiconductors;2018-05-29
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