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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

  • Published:2011-03 Issue:3 Volume:20 Page:033301
  • ISSN:1674-1056
  • Container-title:Chinese Physics B
  • language:
  • Short-container-title:Chinese Phys. B

Author:

Sun Guo-Sheng,Liu Xing-Fang,Wu Hai-Lei,Yan Guo-Guo,Dong Lin,Zheng Liu,Zhao Wan-Shun,Wang Lei,Zeng Yi-Ping,Li Xi-Guang,Wang Zhan-Guo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of BN thin films by chemical vapor deposition on 4H–SiC (0001) single-crystalline surfaces;Vacuum;2024-04

2. Growth of 150 mm 4H-SiC Epilayers with Low Surface Roughness by a Hot-Wall Reactor on 4° off- Axis Substrates;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. Measuring Techniques for the Semiconductor’s Parameters;Springer Handbook of Semiconductor Devices;2022-11-11

4. Influence of spatial dispersion on spectral tuning of phonon-polaritons;Physical Review B;2019-11-20

5. The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC;Journal of Crystal Growth;2018-12
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