The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC-Reference-Cited by-同舟云学术

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The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC

Published:2018-12 Issue: Volume:504 Page:37-40
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Niu Yingxi,Tang Xiaoyan,Sang Ling,Li Yun,Kong Lingyi,Tian Liang,Tian Honglin,Wu Pengfei,Jia Renxu,Yang Fei,Wu Junmin,Pan Yan,Zhang Yuming

Funder

National Key Research and Development Program of China

Program of Global Energy Interconnection Research Institute

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Trends in power semiconductor devices;Baliga;IEEE Trans. Electron Devices,1996

2. Progress in silicon carbide semiconductor electronics technology;Neudeck;J. Electron. Mater.,1995

3. A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage;Allok;IEEE Electron Device Lett.,1994

4. Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination;Itoh;IEEE Electron Device Lett.,1996

5. Development of ultrahigh-voltage SiC devices;Fukuda;IEEE Trans. Electron Devices,2015

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2. Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC;Micromachines;2024-04-29

3. Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates;Materials Today Communications;2024-03

4. Optimizing Temperature and Flow Fields of 4H-SiC Epitaxial Growth by Integrating CFD Simulation with Multi-objective Particle Swarm Optimization;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

5. The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers;Crystals;2023-06-10

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