Optimizing Temperature and Flow Fields of 4H-SiC Epitaxial Growth by Integrating CFD Simulation with Multi-objective Particle Swarm Optimization
Author:
Affiliation:
1. Fudan University,Academy for Engineering & Technology,Shanghai,China,200433
2. Delft University of Technology,EEMCS Faculty,Delft,the Netherlands,2628CD
Funder
National Natural Science Foundation of China
Technology Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492175.pdf?arnumber=10492175
Reference15 articles.
1. Silicon, GaN and SiC: There's room for all: An application space overview of device considerations
2. The 4H-SiC Thick Homoepitaxial Key Technologies Research and Device Verification;Yingxi;Xidian University,2020
3. The Study on the Design and Key Process of Advanced 4H-SiC VDMOSFETs;Yanjing;Xidian University,2018
4. Simulation of Flow Field in CVD Epitaxy Base on Laminar Model;Tao;Research & Progress of SSE,2017
5. Effect of Carrier Gas Flow Field on Chemical Vapor Deposition of 2D MoS2 Crystal
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