Field plate structural optimization for enhancing the power gain of GaN-based HEMTs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=9/a=097303/pdf
Reference16 articles.
1. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
3. High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
4. 10-W/mm AlGaN-GaN HFET with a field modulating plate
5. Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs
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3. TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT;Japanese Journal of Applied Physics;2022-07-22
4. Investigation of proton irradiated dual field plate AlGaN/GaN HEMTs: TCAD based assessment;Microelectronics Journal;2022-04
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