Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=9/a=097101/pdf
Reference21 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
2. Memory switching properties of e-beam evaporated SiOx on N++ Si substrate
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4. Bipolar resistive switching in Cr-doped TiO x thin films
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