Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/10/107302/pdf
Reference19 articles.
1. Nanoionics-based resistive switching memories
2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
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