The etching of a -plane GaN epilayers grown by metal-organic chemical vapour deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
1. Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates
2. Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)
3. High-quality a-plane GaN grown with flow-rate modulation epitaxy on r-plane sapphire substrate
4. Crystallographic wet chemical etching of GaN
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1. Anisotropy and Mechanistic Elucidation of Wet‐Chemical Gallium Nitride Etching at the Atomic Level;physica status solidi (a);2020-09-10
2. Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters;ACS Applied Nano Materials;2020-05-06
3. High-quality nonpolara-plane GaN epitaxial films grown onr-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition;Japanese Journal of Applied Physics;2018-04-09
4. Semipolar $(11\bar{2}2)$ and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition;Chinese Physics B;2017-02
5. C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition;Chinese Physics Letters;2016-12
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