Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates-Reference-Cited by-同舟云学术

Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates

Published:2008 Issue:1 Volume:92 Page:011123
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu J. P.,Limb J. B.,Ryou J.-H.,Yoo D.,Horne C. A.,Dupuis R. D.,Wu Z. H.,Fischer A. M.,Ponce F. A.,Hanser A. D.,Liu L.,Preble E. A.,Evans K. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference18 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors

3. Here, ηin does not include the radiative recombination efficiency, it only considers the carrier injection and collection efficiency into the QWs in the active region, unlike the generally used “internal quantum efficiency ηinternal” in LEDs, which includes the radiative quantum efficiency.

4. Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

5. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

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