High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy-Reference-Cited by-同舟云学术

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High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy

Published:2019-02 Issue:2 Volume:28 Page:028503
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Chang Fa-Ran,Hao Rui-Ting,Qi Tong-Tong,Zhao Qi-Chen,Liu Xin-Xing,Li Yong,Gu Kang,Guo Jie,Wang Guo-Wei,Xu Ying-Qiang,Niu Zhi-Chuan

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/28/2/028503/pdf

Reference17 articles.

1. Metalorganic chemical vapor deposition InGaAsp‐i‐nphotodiodes with extremely low dark current

2. Recent advances in staring hybrid focal plane arrays: comparison of HgCdTe, InGaAs, and GaAs/AlGaAs detector technologies

3. MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient Heuristic

4. High-Operating Temperature HgCdTe: A Vision for the Near Future

5. Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb/InGaAs multiple-quantum-well structures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface Engineering and Electron-Hole Wave Function Overlap of InAs/AlSb Superlattice Infrared Detectors;Photonics;2023-11-16

2. On the origin of carrier localization in AlInAsSb digital alloy;Chinese Physics B;2023-07-01

3. Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories;Frontiers in Physics;2022-04-14

4. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy;J INFRARED MILLIM W;2021

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