Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb/InGaAs multiple-quantum-well structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy
2. InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm
3. MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared diode lasers
4. Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates
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1. High gain and low dark current AlInAsSb avalanche photodiodes grown by quaternary digital alloys;J INFRARED MILLIM W;2021
2. High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy;Chinese Physics B;2019-02
3. Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes;Journal of Crystal Growth;2018-01
4. Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells;SPIE Proceedings;2005-04-28
5. Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP;Japanese Journal of Applied Physics;2004-08-10
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